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N-state memory Cell

FRE has been innovating a new type of N-state memory cell (Patent granted).

  • The markets of portable electronics are growing with an increased requirement  for smaller,  cheaper  and  faster  electronics.
  • Notably portable electronics, such as laptops and mobile phones, benefits from the present project. 
  • Larger packing density: contemporary binary memories require several memory cells for presenting data.
  • The numerical processes become significantly simpler as back- and forth conversion of the binary data to decimal, hexadecimal, octal data etc. can be reduced or even eliminated.
  • Less conversions means simpler circuits
  • Faster electronics
  • The utilization of ferroelectric material as a storing media allows a further simplification. The state of ferroelectric material remains also when the power is turned off, so no memory refreshing electronics is required.
  • Smaller energy consumption


There is a potential way1 to increase the operation temperature of ferroelectrics by several hundred degrees K


1. J. Frantti, Y. Fujioka, A. Puretzky, Y. Xie, Z.-G. Ye, C. Parish, and A. M. Glazer. J. Phys.: Condens. Matter 27, 025901 (2015).


Ferroelectric domains dictate the response to an external stimuli